Mass range

200, 300 or 510 amu

Measures vacuum process gas

composition

Yes

Measures contamination and

leak detection

Yes

Minimum detectable concentration

5 PPB

Sample inlet pressure (Standard)

10^-3  to 5 mbar

Sample inlet pressure (Optional)

< 10^-4 mbar

Fast measurement speed

Up to 500 measurements

per second

Mass range

300, 510, or 1000 amu

Ion analysis 

Positive and negative ions

Neutrals analysis

Neutrals and neutral radicals

Plasma pressure (standard)

Up to 0.5 mbar 

Plasma pressure (options)

Up to 2 mbar, 100 mbar and

Atmospheric pressure

Sampling options

DC and RF biased sampling

electrodes

Energy analysis range 

100 eV or 1000 eV

Mass range

300 or 510 amu

Ion Analysis

Positive ions

Ion Analysis - option

Negative ions

Neutral analysis

Neutrals and neutral

radicals analysis

Plasma pressure 

Up to 0.5 mbar

Energy analysis range

100 eV

Plasma types

For DC, RF, pulsed

 or ECR

Ion and electron density

10¹⁴ - 10¹⁹ m³

Electron temperature

Up to 10 eV

Plasma pressure

Up to 0.5 mbar

Z- motion drive option

300, 600 or 900 mm

Mass range

320 or 510 amu

Growth rate determination 

< 0.01 Angstrom per second,

species dependant

Cross beam ion source acceptance

+/-35^o Beam apertures -

3D modelled

Data output

Real time analogue signal

outputs

Residual gas analysis mode- RGA

Leak detection and chamber

vacuum analysis

Mass range

300 or 510 amu

Multi layer stack

monitoring

End point to +/- 5 Angstrom

High sensitivity

Operates with 99.9%

masked wafers

Automated

Tool integrated automation

recipes

Layer counting

Yes

End point on selected

interface

Yes

End point within

multi-layered stack

Yes

Residual gas analysis mode - RGA

Leak detection and chamber

vacuum analysis

Mass range

300 or 510, or 1000 amu

Heated sample stage

Ambient to 1000^oC

Ramp rate

20 - 40 ^oC per minute

Detector

Pulse ion counting 

3D real time display

Yes

Multiple data views

Yes

Peak integration and

deconvolution

Yes

Background subtraction

Yes

UHV multiport chamber

Yes

Accommodates additional

instrumentation

Yes (E.g. ellipsometry)

Fast measurement speed

Up to 500 measurements

per second

Sample size

~ 10mm X 10mm

Mass range

300, 510 or 1000 amu

Minimum detectable

concentration

PPM/PPB level contamination

analysis

SIMS - Secondary Ion Mass

Spectrometry 

Yes

Analysis of ions ejected from

sample surface

Yes (primary ions of oxygen,

argon or caesium)

SNMS - Secondary Neutral

Mass Spectrometry

Yes

Analysis of ions ejected from

sample surface

Yes (primary ions of oxygen,

argon or caesium)

Depth resolution

+/- 5 nanometer

Minimum detectable

concentration - SIMS

10¹⁶ atoms per cubic centimeter -

species dependent

Minimum detectable

concentration - SNMS

0.01% - species dependant

UHV multiport chamber

Yes

Accommodates additional

instrumentation

Yes (E.g. XPS)

Mass range

300, 510 or 1000 amu

Ion analysis

Positive and negative ions

Ion energy analysis

100eV, 1000eV option,

Sensitivity

> 10⁶ counts/second per nanoamp

for Aluminium

Residual gas analysis mode-

RGA

Leak detection and chamber

vacuum analysis

SIMS - Secondary Ion Mass

Spectrometry

Yes

Analysis of ions ejected from

sample surface

Yes (primary ions of oxygen, argon

or caesium)

FIB-SEM microscopy SIMS

Yes

Fine-focus electron beam

microscope compatible 

Yes (E.g. FIB-SEM - Zeiss Auriga 60)

Mass range

300, 510 or 1000 amu

Ion analysis

Positive and negative ions

Ion energy analysis

100 eV

Sensitivity

> 10⁶ counts/second per nanoamp

for Aluminium

SIMS - Secondary Ion

Mass Spectrometry

Yes

Analysis of ions ejected

from sample surface

Yes (primary ions of oxygen, argon

or caesium)

SNMS - Secondary

Neutral Mass Spectrometry

Yes

Analysis of ions ejected

from sample surface

Yes (primary ions of oxygen, argon

or caesium)

Residual gas analysis

mode- RGA

Leak detection and chamber vacuum

analysis

Primary ion

Cs⁺

Ion energy

0.5 to 5.0 KeV

Minimum spot diameter

20 micrometers

Deflection field for mapping

+/- 4 millimeters

Ion beam current

0.1 to 150 nA  

Maximum Etch Rate

30 nm/min for a

silicon target

Primary ion

Oxygen, Argon, Xenon

Ion energy

0.5 to 5 KeV

Minimum spot size

(elemental mapping)

50 micrometers

Minimum spot size

(depth profiling)

100 micrometers

Deflection field for mapping

+/- 4 millimeters

Ion beam current

1.0 to 800 nanoamperes

Typical fast etch rate- Si

(5 KeV Ar 600nA)

50 nanometers per second,

450um X 650um crater