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ΑΡΧΙΚΗ \ ΠΡΟΪΟΝΤΑ \ Αναλυτικός Εξοπλισμός \ Hiden Analytical \ Mass spectrometers for thin films, plasma and surface engineering

Mass Spectrometer for Thin Films, plasma and surface engineering

  

RGA, plasma ion analysis, surface analysis and SIMS end point detection

  

Thin films, plasma and surface engineering

HPR-30

Process and residual gas analysis

EQP

Analysis of positive and negative ions,

neutrals, and radicals

PSM

Plasma sampling mass spectrometer

ESPion

For measurement of plasma properties

IMP-EPD

For ion etch control and optimum process

quality

XBS

MBE deposition flux rate monitor

TPD Workstation

For UHV temperature programmed desorption

studies

SIMS Workstation

For thin film depth profiling

EQS

For the analysis of secondary +ve and -ve

ions from solid samples

MAXIM

For static and dynamic SIMS and SNMS

IG5C

A 5KeV Caesium ion gun for UHV

surface analysis

IG20

A 5KeV Argon or Oxygen ion source for UHV

surface analysis 

 

 

 Contact us for more informations   

 

Mass Spectrometer for Thin Films, plasma and surface engineering

 

HPR-30

A residual gas analyser for vacuum process analysis

Measures the vacuum process gas composition, contamination and leak detection
HPR-30

Mass range

200, 300 or 510 amu

Measures vacuum process gas

composition

Yes

Measures contamination and

leak detection

Yes

Minimum detectable concentration

5 PPB

Sample inlet pressure (Standard)

10-3  to 5 mbar

Sample inlet pressure (Optional)

< 10-4 mbar

Fast measurement speed

Up to 500 measurements

per second

  

 

EQP

For the analysis of positive and negative ions, neutrals, and radicals from plasma processes

Measures mass spectra  and energy distributions of ions, neutrals and radicals in plasma
EQP

Mass range

300, 510, or 1000 amu

Ion analysis 

Positive and negative ions

Neutrals analysis

Neutrals and neutral radicals

Plasma pressure (standard)

Up to 0.5 mbar 

Plasma pressure (options)

Up to 2 mbar, 100 mbar and

Atmospheric pressure

Sampling options

DC and RF biased sampling

electrodes

Energy analysis range 

100 eV or 1000 eV

  
  
  

 

PSM

A mass and energy analyser for plasma diagnostics

Measures mass spectra of ions, neutrals and radicals in plasma
PSM

Mass range

300 or 510 amu

Ion Analysis

Positive ions

Ion Analysis - option

Negative ions

Neutral analysis

Neutrals and neutral

radicals analysis

Plasma pressure 

Up to 0.5 mbar

Energy analysis range

100 eV

  
  
  

 

ESPion

An advanced Langmuir probe for plasma diagnostics

Measures electrical properties of low pressure plasma
ESPion

Plasma types

For DC, RF, pulsed

 or ECR

Ion and electron density

1014 - 1019 m3

Electron temperature

Up to 10 eV

Plasma pressure

Up to 0.5 mbar

Z- motion drive option

300, 600 or 900 mm

 

 
  
  
  

 

XBS

A system for multiple source monitoring in MBE deposition applications

For molecular beam analysis and deposition rate control
XBS

Mass range

320 or 510 amu

Growth rate determination 

< 0.01 Angstrom per second,

species dependant

Cross beam ion source acceptance

+/-35Beam apertures -

3D modelled

Data output

Real time analogue signal

outputs

Residual gas analysis mode- RGA

Leak detection and chamber

vacuum analysis

 

 
  

 

IMP-EPD

A system for ion etch control and optimum process quality

End Point detection for ion beam and plasma etch processes
IMP-EPD

Mass range

300 or 510 amu

Multi layer stack

monitoring

End point to +/- 5 Angstrom

High sensitivity

Operates with 99.9%

masked wafers

Automated

Tool integrated automation

recipes

Layer counting

Yes

End point on selected

interface

Yes

End point within

multi-layered stack

Yes

Residual gas analysis mode - RGA

Leak detection and chamber

vacuum analysis

  

 

TPD Workstation

A system for UHV temperature programmed desorption (TPD) studies

Measures the temperature programmed desorption  from solid thin film samples 
TPD Workstation

Mass range

300 or 510, or 1000 amu

Heated sample stage

Ambient to 1000oC

Ramp rate

20 - 40 oC per minute

Detector

Pulse ion counting 

3D real time display

Yes

Multiple data views

Yes

Peak integration and

deconvolution

Yes

Background subtraction

Yes

UHV multiport chamber

Yes

Accommodates additional

instrumentation

Yes (E.g. ellipsometry)

Fast measurement speed

Up to 500 measurements

per second

Sample size

~ 10mm X 10mm

 

SIMS/SNMS Workstation

A UHV surface analysis system for thin film depth profiling

Measures the surface composition of the first few nanometers and/or micrometers depth of solid samples
SIMS Workstation

Mass range

300, 510 or 1000 amu

Minimum detectable

concentration

PPM/PPB level contamination

analysis

SIMS - Secondary Ion Mass

Spectrometry 

Yes

Analysis of ions ejected from

sample surface

Yes (primary ions of oxygen,

argon or caesium)

SNMS - Secondary Neutral

Mass Spectrometry

Yes

Analysis of ions ejected from

sample surface

Yes (primary ions of oxygen,

argon or caesium)

Depth resolution

+/- 5 nanometer

Minimum detectable

concentration - SIMS

1016 atoms per cubic centimeter -

species dependent

Minimum detectable

concentration - SNMS

0.01% - species dependant

UHV multiport chamber

Yes

Accommodates additional

instrumentation

Yes (E.g. XPS)

 

EQS

A SIMS analyser 

When used in a SIMS or FIB-SEM system - provides for surface composition analysis and elemental mapping
EQS

Mass range

300, 510 or 1000 amu

Ion analysis

Positive and negative ions

Ion energy analysis

100eV, 1000eV option,

Sensitivity

> 106 counts/second per nanoamp

for Aluminium

Residual gas analysis mode-

RGA

Leak detection and chamber

vacuum analysis

SIMS - Secondary Ion Mass

Spectrometry

Yes

Analysis of ions ejected from

sample surface

Yes (primary ions of oxygen, argon

or caesium)

FIB-SEM microscopy SIMS

Yes

Fine-focus electron beam

microscope compatible 

Yes (E.g. FIB-SEM - Zeiss Auriga 60)

  

 

MAXIM

A SIMS/SNMS analyser

When used in SIMS/SNMS system- provides for surface composition and elemental mapping
MAXIM

Mass range

300, 510 or 1000 amu

Ion analysis

Positive and negative ions

Ion energy analysis

100 eV

Sensitivity

> 106 counts/second per nanoamp

for Aluminium

SIMS - Secondary Ion

Mass Spectrometry

Yes

Analysis of ions ejected

from sample surface

Yes (primary ions of oxygen, argon

or caesium)

SNMS - Secondary

Neutral Mass Spectrometry

Yes

Analysis of ions ejected

from sample surface

Yes (primary ions of oxygen, argon

or caesium)

Residual gas analysis

mode- RGA

Leak detection and chamber vacuum

analysis

  

 

IG5C

A 5 KeV Caesium ion gun for UHV surface analysis applications

Primary ion source for SIMS/SNMS analysis and elemental mapping of electronegative species
IG-5C

Primary ion

Cs+

Ion energy

0.5 to 5.0 KeV

Minimum spot diameter

20 micrometers

Deflection field for mapping

+/- 4 millimeters

Ion beam current

0.1 to 150 nA  

Maximum Etch Rate

30 nm/min for a

silicon target

 

 
  

 

IG20

A 5 KeV Argon or Oxygen ion source for UHV surface analysis applications

Primary ion source for SIMS/SNMS analysis and elemental mapping of electropositive species
IG-20

Primary ion

Oxygen, Argon, Xenon

Ion energy

0.5 to 5 KeV

Minimum spot size

(elemental mapping)

50 micrometers

Minimum spot size

(depth profiling)

100 micrometers

Deflection field for mapping

+/- 4 millimeters

Ion beam current

1.0 to 800 nanoamperes

Typical fast etch rate- Si

(5 KeV Ar 600nA)

50 nanometers per second,

450um X 650um crater

  

 

 

 

 

  Contact us for more informations   

 

 Επιστροφή
Κεντρικά: Σταματίου Ψάλτου 30, 54644 Θεσσαλονίκη, Τηλ.: (+30) 2310-855844, Φαξ: (+30) 2310-886206
Υποκατάστημα: Μομφεράτου 131, 11475 Αθήνα, Τηλ.: (+30) 210-6452848, Φαξ: (+30) 210-6452413, www.megalab.gr, contact@megalab.gr

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