Login Register
HPR-30
Process and residual gas analysis
EQP
Analysis of positive and negative ions,
neutrals, and radicals
PSM
Plasma sampling mass spectrometer
ESPion
For measurement of plasma properties
IMP-EPD
For ion etch control and optimum process
quality
XBS
MBE deposition flux rate monitor
TPD Workstation
For UHV temperature programmed desorption
studies
SIMS Workstation
For thin film depth profiling
EQS
For the analysis of secondary +ve and -ve
ions from solid samples
MAXIM
For static and dynamic SIMS and SNMS
IG5C
A 5KeV Caesium ion gun for UHV
surface analysis
IG20
A 5KeV Argon or Oxygen ion source for UHV
Contact us for more informations
Mass range
200, 300 or 510 amu
Measures vacuum process gas
composition
Yes
Measures contamination and
leak detection
Minimum detectable concentration
5 PPB
Sample inlet pressure (Standard)
10-3 to 5 mbar
Sample inlet pressure (Optional)
< 10-4 mbar
Fast measurement speed
Up to 500 measurements
per second
300, 510, or 1000 amu
Ion analysis
Positive and negative ions
Neutrals analysis
Neutrals and neutral radicals
Plasma pressure (standard)
Up to 0.5 mbar
Plasma pressure (options)
Up to 2 mbar, 100 mbar and
Atmospheric pressure
Sampling options
DC and RF biased sampling
electrodes
Energy analysis range
100 eV or 1000 eV
300 or 510 amu
Ion Analysis
Positive ions
Ion Analysis - option
Negative ions
Neutral analysis
Neutrals and neutral
radicals analysis
Plasma pressure
100 eV
Plasma types
For DC, RF, pulsed
or ECR
Ion and electron density
1014 - 1019 m3
Electron temperature
Up to 10 eV
Z- motion drive option
300, 600 or 900 mm
320 or 510 amu
Growth rate determination
< 0.01 Angstrom per second,
species dependant
Cross beam ion source acceptance
+/-35o Beam apertures -
3D modelled
Data output
Real time analogue signal
outputs
Residual gas analysis mode- RGA
Leak detection and chamber
vacuum analysis
Multi layer stack
monitoring
End point to +/- 5 Angstrom
High sensitivity
Operates with 99.9%
masked wafers
Automated
Tool integrated automation
recipes
Layer counting
End point on selected
interface
End point within
multi-layered stack
Residual gas analysis mode - RGA
300 or 510, or 1000 amu
Heated sample stage
Ambient to 1000oC
Ramp rate
20 - 40 oC per minute
Detector
Pulse ion counting
3D real time display
Multiple data views
Peak integration and
deconvolution
Background subtraction
UHV multiport chamber
Accommodates additional
instrumentation
Yes (E.g. ellipsometry)
Sample size
~ 10mm X 10mm
300, 510 or 1000 amu
Minimum detectable
concentration
PPM/PPB level contamination
analysis
SIMS - Secondary Ion Mass
Spectrometry
Analysis of ions ejected from
sample surface
Yes (primary ions of oxygen,
argon or caesium)
SNMS - Secondary Neutral
Mass Spectrometry
Depth resolution
+/- 5 nanometer
concentration - SIMS
1016 atoms per cubic centimeter -
species dependent
concentration - SNMS
0.01% - species dependant
Yes (E.g. XPS)
Ion energy analysis
100eV, 1000eV option,
Sensitivity
> 106 counts/second per nanoamp
for Aluminium
Residual gas analysis mode-
RGA
Yes (primary ions of oxygen, argon
or caesium)
FIB-SEM microscopy SIMS
Fine-focus electron beam
microscope compatible
Yes (E.g. FIB-SEM - Zeiss Auriga 60)
SIMS - Secondary Ion
Analysis of ions ejected
from sample surface
SNMS - Secondary
Neutral Mass Spectrometry
Residual gas analysis
mode- RGA
Leak detection and chamber vacuum
Primary ion
Cs+
Ion energy
0.5 to 5.0 KeV
Minimum spot diameter
20 micrometers
Deflection field for mapping
+/- 4 millimeters
Ion beam current
0.1 to 150 nA
Maximum Etch Rate
30 nm/min for a
silicon target
Oxygen, Argon, Xenon
0.5 to 5 KeV
Minimum spot size
(elemental mapping)
50 micrometers
(depth profiling)
100 micrometers
1.0 to 800 nanoamperes
Typical fast etch rate- Si
(5 KeV Ar 600nA)
50 nanometers per second,
450um X 650um crater
Created Alpha